MJE341 Ver la hoja de datos (PDF) - Inchange Semiconductor

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MJE341

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJE341

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB=B 0

VCE(sat) Collector-Emitter Saturation Voltage IC=150mA ;IB=15mA

VBE(on) Base-Emitter On Voltage

IC=50mA ; VCE= 10V

ICBO

Collector Cutoff Current

VCB= 175V; IE= 0

ICEO

Collector Cutoff Current

VCB= 150V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 3V; IC= 0

hFE-1

DC Current Gain

IC= 10m A ; VCE= 10V

hFE-2

DC Current Gain

IC= 50m A ; VCE= 10V

hFE-3

DC Current Gain

IC=150m A ; VCE= 10V

COB

Output Capacitance

IE= 0, VCB=20V; f= 0.1MHz

fT

Current Gain-Bandwidth Product

IC=50mA ;VCE=25V; ftest=1MHz

MIN MAX UNIT

150

V

2.3

V

1.0

V

0.3

mA

1.0

mA

0.1

mA

20

25

200

20

15

pF

15

MHz

isc Website：www.iscsemi.cn

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