STP80NE03L-06(1997) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STP80NE03L-06
(Rev.:1997)
(Rev.:1997)
STMicroelectronics
STP80NE03L-06 Datasheet PDF : 6 Pages
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STP80NE03L-06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 15 V
ID = 40 A
RG =4.7 Ω
VGS = 5 V
(see test circuit, figure 3)
VDD = 24 V ID = 80 A VGS = 5 V
Min.
Typ .
40
260
Max.
55
350
Unit
ns
ns
95 130 nC
30
nC
44
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V ID = 80 A
RG =4.7 Ω VGS = 5 V
(see test circuit, figure 5)
Min.
Typ .
70
165
250
Max.
95
220
340
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 80 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD = 80 A
di/dt = 100 A/µs
VDD = 15 V Tj = 150 oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
80
320
Unit
A
A
1.5
V
75
ns
0.14
µC
4
A
3/6
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