2N3906 Ver la hoja de datos (PDF) - Silicon Standard Corp.

Número de pieza

componentes Descripción

Fabricante

2N3906

TRANSISTOR(PNP)

Silicon Standard Corp. 

2N3906

ELECTRICAL CHARACTERISTICS

(Tamb=25 oC unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay Time

Rise Time

Storage Time

Fall Time

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEX

IEBO

hFE1

hFE2

hFE3

VCE(sat)

VBE(sat)

fT

td

tr

ts

tf

Test conditions

IC = -10μA, IE=0

IC =-1mA , IB=0

IE= -10μA, IC=0

VCB= -40 V,IE=0

VCE= -30 V,VBE(off)=-3V

VEB= -5 V , IC=0

VCE=-1 V, IC= -10mA

VCE=-1 V, IC= -50mA

VCE=-1 V, IC= -100mA

IC= -50mA, IB= -5mA

IC= -50mA, IB= -5mA

VCE=-20V, IC= -10mA

f = 100MHz

VCC=-3V,VBE=-0.5V,

IC=-10mA,IB1=-1mA

VCC=-3V,Ic=-10mA

IB1=IB2=-1mA

CLASSIFICATION OF hFE1

Rank

Range

O

100-200

Y

200-300

MIN TYP MAX UNIT

-40

V

-40

V

-5

V

-0.1 μA

-50 nA

-0.1 μA

100

400

60

30

-0.4

V

-0.95

V

250

MHz

35

ns

35

ns

225

ns

75

ns

G

300-400

03/17/2008 Rev.1.00

www.SiliconStandard.com

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