2N3906 Ver la hoja de datos (PDF) - Semtech Electronics LTD.
Número de pieza
componentes Descripción
Fabricante
2N3906 Datasheet PDF : 3 Pages
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2N3905 / 2N3906
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 0.1 mA
at -VCE = 1 V, -IC = 1 mA
at -VCE = 1 V, -IC = 10 mA
at -VCE = 1 V, -IC = 50 mA
at -VCE = 1 V, -IC = 100 mA
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 6 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
Base Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
Gain Bandwidth Product
at -VCE = 20 V, -IC = 10 mA, f = 100 MHz
2N3905
2N3906
Collector Base Capacitance
at -VCB = 5 V, f = 100 KHz
Delay Time
at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA
Rise Time
at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA
Storage Time
at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA
Fall Time
at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA
Symbol
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VCE(sat)
-VBE(sat)
-VBE(sat)
fT
Cob
td
tr
ts
tf
Min.
30
60
40
80
50
100
30
60
15
30
-
-
40
40
6
-
-
-
-
200
250
-
-
-
-
-
Max.
-
-
-
-
150
300
-
-
-
-
50
50
-
-
-
0.25
0.4
0.85
0.95
-
-
4.5
35
35
225
75
Unit
-
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
ns
ns
ns
ns
SEMTECH ELECTRONICS LTD.
®
Dated : 11/08/2016 Rev:02
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