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Fabricante

2N3906_OLD

PNP EPITAXIAL PLANAR TRANSISTOR

Unisonic Technologies 

UTC 2N3906

PNP EPITAXIAL PLANAR TRANSISTOR

GENERAL PURPOSE APPLIATION

FEATURES

*Collector-Emitter Voltage: VCEO=40V

*Collector Dissipation: Pc(max)=625mW

*Complementary to 2N3904

1

TO-92

1:EMITTER 2:BASE 3:COLLECTOR

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATING

Collector-base voltage

VCBO

-40

Collector-emitter voltage

VCEO

-40

Emitter-base voltage

VEBO

-5

Collector current

Ic

-200

Base Current

IB

-50

Collector dissipation

Pc

625

Junction Temperature

Tj

150

Storage Temperature

TSTG

-55 ~ +150

UNIT

V

V

V

mA

mA

mW

°C

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector Cut-off Current

ICEX

VCE=-30V, VEB=-3V

Base Cut-off Current

IBL

VCE=-30V, VEB=-3V

Collector-base breakdown voltage

VCBO

Ic=-10µA,IE=0

-40

Collector-emitter breakdown voltage VCEO

Ic=-1mA,IB=0

-40

(note)

Emitter-base breakdown voltage

VEBO

IE=-10µA, Ic=0

-6

DC current gain (note)

hFE1

VCE=-1V,Ic=-0.1mA

60

hFE2

VCE=-1V,Ic=-1mA

80

hFE3

VCE=-1V,Ic=-10mA

100

hFE4

VCE=-1V,Ic=-50mA

60

hFE5

VCE=-1V,Ic=-100mA

30

Collector-emitter saturation voltage VCE(sat)1

Ic=-10mA,IB=-1mA

(note)

VCE(sat)2

Ic=-50mA,IB=-5mA

Base-emitter saturation voltage VBE(sat)1

Ic=-10mA,IB=-1mA

-0.65

VBE(sat)2

Ic=-50mA,IB=-5mA

Transition voltage

fT

VCE=-20V,Ic=-10mA,f=100MHz 250

TYP

MAX

-50

-50

300

-0.25

-0.4

-0.85

-0.95

UNIT

nA

nA

V

V

V

V

V

MHz

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R201-028,A

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