2N3906-O_02 Ver la hoja de datos (PDF) - Secos Corporation.
Número de pieza
componentes Descripción
Fabricante
2N3906-O_02 Datasheet PDF : 3 Pages
| |||
Elektronische Bauelemente
2N3906
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
ƔFEATURES
. Power Dissipation
PCM: 625 mW (Ta=25к)
. Collector Current
ICM: -200 mA
. Collector - Base Voltage
V(BR)CBO: -40 V
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
ƔELECTRICAL CHARACTERISTICS (TA = 25 к unless otherwise specified)
Parameter
SYMBOL TEST CONDITIONS
Min.
Typ.
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Transition Frequency
V(BR)CEO IC = -1 mA, IB = 0 A
-40
-
V(BR)CBO IC = -100 µA, IE = 0 A
-40
-
V(BR)EBO IE = -100 µA, IC = 0 A
-5
-
ICBO
VCB = -40 V, IE = 0 A
-
-
ICEO
VCE = -40 V, IB = 0 A
-
-
IEBO
VEB = -5 V, IC = 0 A
-
-
hFE(1)
VCE = -1 V, IC = -10 mA
100
-
hFE(2)
VCE = -1 V, IC = -50 mA
60
-
VCE(sat) IC = -50 mA, IB = -5 mA
-
-
VBE(sat) IC = -50 mA, IB = -5 mA
-
-
fT
VCE = -20 V, IC = -10 mA
250
f = 100 MHz
-
Operating and Storage Junction Temperature Range TJ, TSTG
-
-55 ~ +150
Max.
-
-
-
-0.1
-0.1
-0.1
400
-
0.3
-0.95
-
UNIT
V
V
V
µA
-
V
V
MHz
к
ƔCLASSIFICATION OF hFE(1)
Rank
O
Rang
100 ~ 200
Y
200 ~ 300
G
300 ~ 400
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
Share Link: 