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DTC114TSA Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
Fabricante
DTC114TSA
ROHM
ROHM Semiconductor ROHM
DTC114TSA Datasheet PDF : 4 Pages
1 2 3 4
Transistors
DTC114TM / DTC114TE / DTC114TUA
DTC114TKA / DTC114TSA
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Limits(DTA114T )
Symbol
Unit
M E UA KA SA
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
100
mA
PC
150
200
300 mW
Tj
150
°C
Tstg
55 to +150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Transition frequency of the device
Symbol Min. Typ. Max. Unit
Conditions
BVCBO
50
V IC=50µA
BVCEO
50
V IC=1mA
BVEBO
5
V IE=50µA
ICBO
0.5 µA VCB=50V
IEBO
0.5 µA VEB=4V
VCE(sat)
0.3
V IC/IB=10mA/1mA
hFE
100 250 600
VCE=5V, IC=1mA
R1
7
10
13
k
fT
250
MHz VCE=10V, IE=−5mA, f=100MHz
zPackaging specifications
Package
Package type
Code
VMT3
Taping
T2L
Type
Basic ordering
unit (pieces)
8000
DTC114TM
DTC114TE
DTC114TUA
DTC114TKA
DTC114TSA
EMT3
Taping
TL
3000
UMT3
Taping
T106
3000
SMT3
Taping
T146
3000
SPT
Taping
TP
5000
Rev.A
2/3

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