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BAL74,215

High-speed diode

NXP Semiconductors. 

Philips Semiconductors

High-speed diode

Product specification

BAL74

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

VRRM

VR

IF

IFRM

IFSM

Ptot

Tstg

Tj

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

total power dissipation

storage temperature

junction temperature

see Fig.2; note 1

square wave; Tj = 25 °C prior to surge;

see Fig.4

tp = 1 µs

tp = 1 ms

tp = 1 s

Tamb = 25 °C; note 1

Note

1. Device mounted on an FR4 printed-circuit board.

MIN. MAX. UNIT

−

50 V

−

50 V

−

215 mA

−

500 mA

−

4

A

−

1

A

−

0.5 A

−

250 mW

−65 +150 °C

−

150 °C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

Vfr

forward recovery voltage

CONDITIONS

MAX. UNIT

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

see Fig.5

715 mV

855 mV

1

V

1.25 V

VR = 50 V

0.1 µA

VR = 50 V; Tj = 150 °C

100 µA

f = 1 MHz; VR = 0; see Fig.6

2

pF

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.7

4

ns

when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(j-tp)

Rth(j-a)

thermal resistance from junction to tie-point

thermal resistance from junction to ambient note 1

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

VALUE

330

500

UNIT

K/W

K/W

2003 Dec 17

3

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