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MMBD6100LT1 Datasheet PDF : 8 Pages
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MMBD6100LT1
Monolithic Dual
Switching Diode
MAXIMUM RATINGS (EACH DIODE)
Symbol
Rating
VR
IF
IFM(surge)
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Symbol
Characteristic
PD
Total Device Dissipation, FR–5 Board (1)
TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
RqJA
Thermal Resistance, Junction to Ambient
TJ, Tstg Junction and Storage
Temperature Range
(1) FR– 5 = 1.0 0.75 0.062 in.
(2) Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Value
70
200
500
Unit
Vdc
mAdc
mAdc
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to
+150
mW/°C
°C/W
°C
http://onsemi.com
3
1
2
PLASTIC
SOT–23S
CASE 318
DEVICE MARKING
5BM
3
CATHODE
ANODE
1
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMBD6100LT1 SOT–23S 3000/Tape & Reel
MMBD6100LT3 SOT–23S 10,000/Tape & Reel
© Semiconductor Components Industries, LLC, 2000
1
April, 2000 – Rev. 1
Publication Order Number:
MMBD6100LT1/D
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