STPS10L45CF Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STPS10L45CF

LOW DROP POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS10L45CT/CG/CF/CFP

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

IR(mA)

1E+2

1E+1

1E+0

Tj=150°C

Tj=125°C

Tj=100°C

1E-1

1E-2

1E-3

0

Tj=25°C

VR(V)

5 10 15 20 25 30 35 40 45

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

C(pF)

1000

F=1MHz

Tj=25°C

100

10

1

2

VR(V)

5

10

20

50

Fig. 9: Forward voltage drop versus forward

current (maximum values, per diode).

IFM(A)

100.0

10.0

Tj=150°C

Typical values

1.0

Tj=125°C

Tj=25°C

VFM(V)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness: 35µm)( D2PAK).

Rth(j-a) (°C/W)

80

70

60

50

40

30

20

10

S(Cu) (cm²)

0

0 4 8 12 16 20 24 28 32 36 40

4/7

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