STPS10L45CF Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS10L45CF Datasheet PDF : 7 Pages
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STPS10L45CT/CG/CF/CFP
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100
1000
0
25
50
75
100
125
150
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB and D2PAK).
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (ISOWATT220AB,
TO-220FPAB).
IM(A)
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220AB and D2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
T
tp(s)
1E-1
δ=tp/T
tp
1E+0
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
3/7
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