STPS10L45CFP Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS10L45CFP Datasheet PDF : 7 Pages
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STPS10L45CT/CG/CF/CFP
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Rth (j-c)
Junction to case
Rth (c)
Parameter
TO-220AB
D2PAK
ISOWATT220AB
TO-220FPAB
Per diode
Total
Coupling
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
3
1.7
0.35
5
3.8
2.5
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
IR * Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
VF * Forward voltage drop Tj = 25°C
IF = 5 A
Tj = 125°C
IF = 5 A
Tj = 25°C
IF = 10 A
Tj = 125°C
IF = 10 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.33 x IF(AV) + 0.026 IF2(RMS)
Min. Typ. Max. Unit
0.15 mA
45 90 mA
0.53 V
0.36 0.46
0.67
0.49 0.59
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
3.5
δ = 0.1 δ = 0.2
3.0
δ = 0.05
δ = 0.5
2.5
δ=1
2.0
1.5
1.0
T
0.5
IF(av) (A)
δ=tp/T
tp
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
6
5
4
3
2
T
1
δ=tp/T
tp
0
0
25
50
Rth(j-a)=Rth(j-c)
TO-220AB/D²PAK
TO-220FPAB
ISOWATT220AB
Rth(j-a)=15°C/W
Tamb(°C)
75
100 125
150
2/7
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