SISA18ADN Ver la hoja de datos (PDF) - Vishay Semiconductors
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SISA18ADN Datasheet PDF : 13 Pages
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New Product
SiSA18ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.030
10
TJ = 150 °C
1
TJ = 25 °C
0.024
0.018
0.1
0.012
0.01
0.006
ID = 10 A
TJ = 125 °C
TJ = 25 °C
0.001
0.0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.000
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.2
40
- 0.1
30
ID = 5 mA
- 0.4
20
ID = 250 μA
- 0.7
10
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
IDM Limited
10
ID Limited
100 μs
1 Limited by RDS(on)*
1 ms
10 ms
100 ms
0.1
1s
10 s
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63259
4
S13-0112-Rev. A, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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