2N6661 Ver la hoja de datos (PDF) - Microchip Technology

Número de pieza

componentes Descripción

Fabricante

2N6661

N-Channel, Enhancement-Mode, Vertical DMOS FET

Microchip Technology 

2N6661

THERMAL CHARACTERISTICS

Package

TO-39

ID(1)

continuous

(mA)

350

ID

pulsed

(A)

3.0

Power

Dissipation

@TA = 25°C (W)

6.25

Note 1: ID (continuous) is limited by max rated TJ.

Product Summary

BVDSX/BVDGS

(V)

90

RDS(ON)

(max) (Ω)

4.0

IDR(1)

(mA)

350

IDRM

(A)

3.0

IDSS

(min) (A)

1.5

2.0 PIN DESCRIPTION

The locations of the pins are listed in Package Types

and Packaging Information.

TABLE 2-1: PIN DESCRIPTION

Pin # TO-39

1

2

3

Function

SOURCE

GATE

DRAIN

 2016 Microchip Technology Inc.

DS20005516A-page 3

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