2N6661 Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
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2N6661 Datasheet PDF : 3 Pages
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N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6661
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
VDS = VGS
ID = 1.0µA
ID = 1.0mA
VGS(th)
Gate Threshold Voltage
TC = 125°C
TC = -55°C
IGSS
Gate-Source Leakage Current
VGS = ±20V
VDS = 0V
TC = 125°C
IDSS
Zero Gate Voltage
Drain Current
VDS = 72V
VGS = 0
TC = 125°C
ID(ON)(2)
On-State Drain Current
VDS = 10V
VGS = 10V
RDS(on)(2)
Static Drain-Source
On-State Resistance
VGS = 5V
VGS = 10V
ID = 0.3A
ID = 1.0A
TC = 125°C
VDS(on)(2)
Static Drain-Source
On-State Voltage
gfs(2)
VSD(2)
trr(2)
Forward Transconductance
Body Diode Forward Voltage
Body Diode Reverse Recovery
VGS = 5V
VGS = 10V
VDS = 7.5V
VGS = 0
VGS = 0
ID = 0.3A
ID = 1.0A
TC = 125°C
ID = 0.475A
IS = 0.86A
IS = 1.0A
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
td(off)
Turn-Off Delay Time
VGS = 0
VDS = 25V
f = 1.0MHz
VDD = 25V
ID = 1.0A
RG = 50Ω
Min. Typ. Max. Units
90
V
0.8
2.0
0.3
V
2.5
±100
nA
±500
1.0
µA
100
1.5
A
5.3
4.0
Ω
7.5
1.6
4.0
V
7.5
170
mƱ
0.7
1.4
V
350
ns
50
40
pF
10
10
ns
10
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 3092
Website: http://www.semelab-tt.com
Issue 5
Page 2 of 3
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