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TS3310ITD1022TP Ver la hoja de datos (PDF) - Touchstone Semiconductor Inc

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TS3310ITD1022TP Datasheet PDF : 18 Pages
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TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
L
10µH
PN: CBC3225T100KR
CIN=CSTORE
10µF
Circuit B
100µH
PN: CBC3225T101KR
1µF
Minimum Start-Up Voltage vs STORE Output Current
Circuit A with 10Ω Source Resistance (STORE=1.8V)
1.50
+85°C
1.25
-40°C
+25°C
1.00
0.75
0.50
0.001 0.01 0.1 1
10 100
ISTORE - mA
Minimum Start-Up Voltage vs STORE Output Current
Circuit A with 10Ω Source Resistance (STORE=3V)
2.00
-40°C
1.75
1.50
1.25
1.00
+25°C
+85°C
0.75
0.50
0.001 0.01 0.1 1
10 100
ISTORE - mA
Minimum Start-Up Voltage vs STORE Output Current
Circuit B with 10Ω Source Resistance (STORE=1.8V)
1.50
+25°C
1.30
1.10
-40°C
0.90
+85°C
0.70
0.001 0.01
0.1
1
10
ISTORE - mA
Minimum Start-Up Voltage vs STORE Output Current
Circuit B with 10Ω Source Resistance (STORE=3V)
1.50
+85°C
1.30
1.10
-40°C
0.90
+25°C
0.70
0.001 0.01
0.1
1
10
ISTORE - mA
TS3310DS r1p1
Page 7
RTFDS

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