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TS3310ITD1022T Ver la hoja de datos (PDF) - Silicon Laboratories

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TS3310ITD1022T Datasheet PDF : 20 Pages
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TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
L
10µH
PN: CBC3225T100KR
CIN=CSTORE
CLSW
22 µF
220pF
Minimum Start-Up Voltage vs STORE Output Current
Circuit A with 10Ω Source Resistance (STORE=5V)
3.6
3.3
3.0
2.7
Circuit B
100µH
PN: CBC3225T101KR
2.2 µF
---
Minimum Start-Up Voltage vs STORE Output Current
Circuit B with 10Ω Source Resistance (STORE=5V)
3.0
+25°C
2.5
2.4
-40°C
2.1
1.8
+25°C
+85°C
-40°C
2.0
+85°C
1.5
0.001 0.01 0.1
1
10 100
ISTORE - mA
1.5
0.001 0.01
0.1
1
10
ISTORE - mA
Minimum Start-Up Voltage
vs Source Resistance : VSTORE=1.8V
2.0
Minimum Start-Up Voltage
vs Source Resistance : VSTORE=3V
2.0
Circuit A
Circuit A
1.5
1.5
Circuit B
Circuit B
1.0
1.0
0.5
0
0
Page 8
5
10
15
20
Source Resistance - kΩ
0.5
0
0
5
10
15
20
Source Resistance - kΩ
TS3310 Rev. 1.1

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