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TS3310ITD1022T Ver la hoja de datos (PDF) - Silicon Laboratories

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TS3310ITD1022T Datasheet PDF : 20 Pages
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TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
L
10µH
PN: CBC3225T100KR
CIN=CSTORE
CLSW
22 µF
220pF
Active-Mode IQ vs Input Voltage
with No Load : Circuit A (STORE=3V)
800
Circuit B
100µH
PN: CBC3225T101KR
2.2 µF
---
Active-Mode IQ vs Input Voltage
with No Load : Circuit B (STORE=3V)
800
640
+85°C
480
640
+85°C
480
320
+25°C
160
-40°C
0
0.90 1.32 1.74 2.16 2.58 3.00
Input Voltage - V
Active-Mode IQ vs Input Voltage
with No Load : Circuit A (STORE=5V)
800
+85°C
640
320
+25°C
160
-40°C
0
0.90 1.32 1.74 2.16 2.58 3.00
Input Voltage - V
Active-Mode IQ vs Input Voltage
with No Load : Circuit B (STORE=5V)
800
+85°C
640
480
320
+25°C
-40°C
160
0
2.00 2.25
2.50
2.75
3.00
Input Voltage - V
Page 6
480
+25°C
320
-40°C
160
0
2.00
2.25
2.50
2.75
3.00
Input Voltage - V
TS3310 Rev. 1.1

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