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TS3310ITD1022T Ver la hoja de datos (PDF) - Silicon Laboratories

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TS3310ITD1022T Datasheet PDF : 20 Pages
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TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
L
10µH
100µH
PN: CBC3225T100KR PN: CBC3225T101KR
CIN=CSTORE
CLSW
22 µF
220pF
2.2 µF
---
Efficiency vs STORE Output Current
IN=3V, STORE=5V
100
Circuit B
90
80
70
Circuit A
60
50
40
30
20
10
0
0.0001 0.001 0.01 0.1 1
ISTORE - mA
10 100
Active-Mode IQ vs Input Voltage
with No Load : Circuit A (STORE=1.8V)
800
Active-Mode IQ vs Input Voltage
with No Load : Circuit B (STORE=1.8V)
800
640
640
+85°C
480
480
320
+25°C
160
-40°C
0
0.900
1.125 1.350 1.575
Input Voltage - V
1.800
320
160
0
0.900
+85°C
+25°C
-40°C
1.125 1.350 1.575
Input Voltage - V
1.800
TS3310 Rev. 1.1
Page 5

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