TS3310ITD1022T Ver la hoja de datos (PDF) - Silicon Laboratories
Número de pieza
componentes Descripción
Fabricante
TS3310ITD1022T
Silicon Laboratories
TS3310ITD1022T Datasheet PDF : 20 Pages
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TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
L
10µH
PN: CBC3225T100KR
CIN=CSTORE
22 µF
CLSW
220pF
Efficiency vs STORE Output Current
IN=1.2V, STORE=1.8V
100
90
Circuit B
80
70
60
Circuit A
50
40
30
20
10
0
0.0001 0.001 0.01 0.1 1
ISTORE - mA
10 100
Circuit B
100µH
PN: CBC3225T101KR
2.2 µF
---
Efficiency vs STORE Output Current
IN=1.2V, STORE=3V
100
90
Circuit B
80
70
60
Circuit A
50
40
30
20
10
0
0.0001 0.001 0.01 0.1 1
ISTORE - mA
10 100
Efficiency vs STORE Output Current
IN=2.4V, STORE=3V
100
Circuit B
90
80
70
Circuit A
60
50
40
30
20
10
0
0.0001 0.001 0.01 0.1 1
ISTORE - mA
10 100
Efficiency vs STORE Output Current
IN=2V, STORE=5V
100
90
Circuit A
80
70
Circuit B
60
50
40
30
20
10
0
0.0001 0.001 0.01 0.1 1
ISTORE - mA
10 100
Page 4
TS3310 Rev. 1.1
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