B1185 Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Número de pieza

componentes Descripción

Fabricante

B1185

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SB1185

2SB1185 TRANSISTOR (PNP)

D FEATURES

Power dissipation

T PCM:

2 W (Tamb=25℃)

.,L Collector current

ICM:

-3 A

Collector-base voltage

O V(BR)CBO:

-60 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

Collector-base breakdown voltage

O Collector-emitter breakdown voltage

R Emitter-base breakdown voltage

T Collector cut-off current

Emitter cut-off current

C DC current gain

E Collector-emitter saturation voltage

L Base-emitter saturation voltage

E Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

VCE(sat)

VBE(sat)

fT

Cob

Test conditions

Ic=-50µA, IE=0

Ic=-1mA, IB=0

IE=-50µA, IC=0

VCB=-40V, IE=0

VEB=-4V, IC=0

VCE=-3V, IC=-0.5A

IC=-2A, IB=-0.2A

IC=-2A, IB=-0.2A

VCE=-5V, IC=-0.5A, f=30MHz

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-60

V

-50

V

5

V

-1

µA

-1

µA

60

320

-1

V

-1.5 V

70

MHz

50

pF

EJ CLASSIFICATION OF hFE(1)

WRank

D

E

F

Range

60-120

100-200

160-320

Marking

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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