BA683-GS08(2006) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
BA683-GS08 Datasheet PDF : 3 Pages
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BA682 / BA683
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Reverse current
Diode capacitance
IF = 100 mA
VR = 20 V
f = 100 MHz, VR = 1 V
f = 100 MHz, VR = 3 V
Differential forward resistance f = 200 MHz, IF = 3 mA
f = 200 MHz, IF = 10 mA
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100
f = 200 MHz
Tj = 25 °C
10
Part
Symbol
Min
VF
IR
CD
BA682
CD
BA683
CD
BA682
rf
BA683
rf
BA682
rf
BA683
rf
BA 683
1
BA 682
0.1
0.1
1
10
100
94 9074
IF - Forward Current (mA)
Figure 1. Differential Forward Resistance vs. Forward Current
3.0
2.5
f = 200 MHz
T j = 25 °C
2.0
1.5
1.0
BA 683
0.5
BA 682
0
0.1
1
10
100
94 9075
VR - Reverse Voltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
Typ.
Max
Unit
1000
mV
50
nA
1.5
pF
1.25
pF
1.2
pF
0.7
Ω
1.2
Ω
0.5
Ω
0.9
Ω
www.vishay.com
2
Document Number 85530
Rev. 1.5, 16-Mar-06
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