BD825 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

BD825

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

BD825

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 45V(Min)

·High DC Current Gain

·Low Saturation Voltage

·Complement to Type BD826

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for driver-stages in hi-fi amplifiers and

television circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

45

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1.0

A

ICP

Collector Current-Peak

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

1.5

A

2

W

10

150

℃

Tstg

Storage Temperature Range

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

-65~150

℃

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

12.5 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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