2SB1440 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

2SB1440

Silicon PNP transistor in a SOT-89 Plastic Package

Unspecified 

2SB1440

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current-Continuous

Collector Current -Continuous(Pulse)

Collector Power Dissipation*

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

*PC

Tj

Tstg

数值

Rating

-50

-50

-5.0

-2.0

-3.0

1.0

150

-55～150

单位

Unit

V

V

V

A

A

W

℃

℃

*printed circuit board: copper foil area of 1cm2 or more, and the board thickness of 1.7mm for C

portion.

*印制线路板要求：与 C 脚接触的铜箔面积为 1cm2 或更大、厚度为 1.7mm。

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-10μA IE=0

VCEO IC=-1.0mA IB=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-50

V

-50

V

Emitter to Base Breakdown Voltage VEBO IE=-10μA IC=0

-5.0

V

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE(1) VCE=-2.0V IC=-200mA 120

340

hFE(2) VCE=-2.0V IC=-1.0A

60

VCE(sat) IC=-1.0A

IB=-50mA

-0.2 -0.3 V

Collector to Base Saturation Voltage VBE(sat)

Transition Frequency

fT

Collector Output Capacitance

Cob

IC=-1.0A

VCB=-10V

f=200MHz

VCB=-10V

f=1.0MHz

IB=-50mA

IC=-50mA

IE=0

-0.85 -1.2 V

80

MHz

45 60 pF

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