MBR1645 Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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MBR1645 Datasheet PDF : 5 Pages
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SEMICONDUCTOR
10
MBR1645 Series RRooHHSS
Nell Semiconductors
Fig.5 Maximum thermal impedance Rth(j-c) characteristics
1
0.1
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty Factor D =t1/t2
2.Peak TJ = PDM xRth(j-c)+TC
0.001
0.01
0.1
1.0
10
Rectangular pulse duration, t1 (s)
Fig.6 Forward power loss characteristics
15
10
RMS limit
5
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0
0
5
10
15
20
25
Average forward current, lF(AV) (A)
Fig.7 Maximum non-repetitive surge current
(per leg)
10000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
1
10
100
1000
10000
Square wave pulse duration, tp (µs)
Fig.8 Unclamped inductive test circuit
D.U.T.
Current
monitor
L
IRFP460
Rg = 25Ω
High-speed
switch
Freewheel
diode
40HFL40S02
+ Vd = 25V
Note
(1) Formula used:TC = TJ - (Pd+PdREV) x RthJC;
Pd = Forward power loss = lF(AV) x VFM at (lF(AV)/D)(see fig.6);
PdREV = lnverse power loss = VR1 x lR (1-D); lR at VR1 = Rated VR
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