DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NCP360SNT3G Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
NCP360SNT3G Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
NCP360
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Minimum Voltage (IN to GND)
Minimum Voltage (All others to GND)
Maximum Voltage (IN to GND)
Maximum Voltage (All others to GND)
Maximum Current from Vin to Vout (PMOS)
Thermal Resistance, Junction-to-Air (Note 1)
TSOP-5
UDFN
Vminin
Vmin
Vmaxin
Vmax
Imax
RqJA
-0.3
V
-0.3
V
21
V
7.0
V
600
mA
305
°C/W
260
Operating Ambient Temperature Range
Storage Temperature Range
Junction Operating Temperature
ESD Withstand Voltage (IEC 61000-4-2)
Human Body Model (HBM), Model = 2 (Note 2)
Machine Model (MM) Model = B (Note 3)
TA
Tstg
TJ
Vesd
-40 to +85
°C
-65 to +150
°C
150
°C
15 Air, 8.0 Contact
kV
2000
V
200
V
Moisture Sensitivity
MSL
Level 1
-
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. RqJA is highly dependent on the PCB heat sink area (connected to PAD1, UDFN). See PCB Recommendations.
2. Human Body Model, 100 pF discharged through a 1.5 kW resistor following specification JESD22/A114.
3. Machine Model, 200 pF discharged through all pins following specification JESD22/A115.
4. Compliant with JEDEC Latch-up Test, up to maximum voltage range.
ELECTRICAL CHARACTERISTICS
(Min/Max limits values (-40°C < TA < +85°C) and Vin = +5.0 V. Typical values are TA = +25°C, unless otherwise noted.)
Characteristic
Symbol
Conditions
Min
Typ
Max Unit
Input Voltage Range
Vin
1.2
20
V
Undervoltage Lockout Threshold
UVLO
Vin falls down UVLO threshold
2.85
3.0 3.15
V
Uvervoltage Lockout Hysteresis
UVLOhyst
50
70
90
mV
Overvoltage Lockout Threshold
Overvoltage Lockout Hysteresis
Vin versus Vout Dopout
Supply Quiescent Current
OVLO Supply Current
Output Off State Current
FLAG Output Low Voltage
FLAG Leakage Current
OVLO
OVLOhyst
Vdrop
Idd
Idduvlo
Istd
Volflag
FLAGleak
Vin rises up OVLO threshold
Vin = 5 V, I charge = 500 mA
No Load, Vin = 5.25 V
Vin = 7 V
Vin = 5.25 V, EN = 1.2 V
Vin > OVLO, Sink 1 mA on FLAG pin
FLAG level = 5 V
5.43 5.675 5.9
V
50
100 125 mV
105 200 mV
24
35
mA
50
85
mA
26
37
mA
400 mV
5.0
nA
EN Voltage High
EN Voltage Low
EN Leakage Current
Vih
Vol
ENleak
Vin from 3.3 V to 5.25 V
Vin from 3.3 V to 5.25 V
EN = 5.5 V or GND
1.2
V
0.4
V
170
nA
TIMINGS
Start Up Delay
FLAG going up Delay
Output Turn Off Time
ton
From Vin > UVLO to Vout = 0.8xVin, See Fig 3
tstart
From Vin > UVLO to FLAG = 1.2 V, See Fig 3
toff
From Vin > OVLO to Vout 0.3 V, See Fig 4
Vin increasing from 5 V to 8 V at 1ĂV/ms.
No output capacitor.
4.0
15
ms
3.0
ms
0.8
1.5
ms
Alert Delay
tstop
From Vin > OVLO to FLAG 0.4 V, See Fig 4
Vin increasing from 5 V to 8 V at 3ĂV/ms
Disable Time
tdis
From EN 0.4 to 1.2V to Vout 0.3 V, See Fig 5
Vin = 4.75 V. No output capacitor.
Thermal Shutdown Temperature
Tsd
Thermal Shutdown Hysteresis
Tsdhyst
NOTE: Thermal Shutdown parameter has been fully characterized and guaranteed by design.
1.0
2.0
ms
2.0
ms
150
°C
30
°C
http://onsemi.com
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]