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Número de pieza
componentes Descripción
BUZ171 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BUZ171
SIPMOS® Power Transistor
Infineon Technologies
BUZ171 Datasheet PDF : 9 Pages
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9
BUZ 171
Power dissipation
P
tot
=
Æ’
(
T
C
)
45
W
P
tot
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
T
C
Safe operating area
I
D
=
Æ’
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25°C
-10
2
A
I
D
-10
1
/
I
D
=
V
DS
R
DS(on)
t
p
= 90.0µs
100 µs
1 ms
10 ms
-10
0
DC
Drain current
I
D
=
Æ’
(
T
C
)
parameter:
V
GS
≥
-10 V
-9
A
I
D
-7
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 °C 160
T
C
Transient thermal impedance
Z
th JC
=
Æ’
(
t
p
)
parameter:
D = t
p
/
T
10
1
K/W
Z
thJC
10
0
10
-1
10
-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
-1
-10
0
-10
1
V -10
2
V
DS
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
Semiconductor Group
5
07/96
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