IRFP450 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
IRFP450 Datasheet PDF : 3 Pages
| |||
IRFP450
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on) Turn-on Time
tr
Rise Time
VDD = 250 V ID = 7A
RG= 4.7 il VGS = 10V
(see test circuit, figure 1 )
24
ns
14
ns
Qg Total Gate Charge
VDD = 400 V ID=14A V G s = 1 0 V
75
nC
Qgs Gate-Source Charge
13.5
nC
Qgd Gate-Drain Charge
27
nC
SWITCHING OFF
Symbol
tr(voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400V ID =14 A
R G = 4.7 U VGS= 10 V
(see test circuit, figure 3)
Min.
Typ.
15
25
35
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM(') Source-drain Current
(pulsed)
VSD (*) Forward On Voltage ISD = 14 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
IRRM Reverse Recovery
Current
ISD = 14 A di/dt = 100 A/us
VDD = 100 V TJ = 150 °C
(see test circuit, figure 3)
( • • ) Pulsed: Pulse duration =300 us. duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min. Typ. Max. Unit
14
A
56
A
1.4
V
680
ns
9
nc
26
A
Safe Operating Area
ID W
Thermal Impedance
10 ' tp(s)
Share Link: 