BD332 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

BD332

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

BD332

DESCRIPTION

·High DC Current Gain

·Complement to type BD331

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·PNP epitaxial base transistors in monolithic Darlington

circuit for audio output stages and general amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-6

A

IBM

Base Current-Peak

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-0.15

A

60

W

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

2.08 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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