MBR1035 Ver la hoja de datos (PDF) - Shanghai Sunrise Electronics
Número de pieza
componentes Descripción
Fabricante
MBR1035 Datasheet PDF : 2 Pages
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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +175°C
Catalog
Number
Device
Marking
MBR1020 MBR1020
MBR1030 MBR1030
MBR1035 MBR1035
MBR1040 MBR1040
MBR1045 MBR1045
MBR1060 MBR1060
MBR1080 MBR1080
MBR10100 MBR10100
Maximum
Recurrent
Peak
Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
14V
21V
24.5V
28V
31.5V
42V
56V
70V
20V
30V
35V
40V
45V
60V
80V
100V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
10A TC = 125°C
Peak Forward Surge
IFSM
Current
150A 8.3ms, half sine
Maximum Forward
Voltage Drop Per
Element
MBR1020-1045
VF
MBR1045-1060
MBR1080-10100
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
MBR1020-1045
IR
MBR1060-10100
.84V
.95V
.84V
IFM = 20 A mper
TA = 25°C
I FM = 10 A mper
0.1mA TJ = 25°C
0.15mA
Typical Junction
Capacitance
CJ
400pF Measured at
1.0MHz, VR=4.0V
MBR1020
THRU
MBR10100
10 Amp
Schottky Barrier
Rectifier
20 to 100 Volts
TO-220AC
B
L
M
C
D
K
A
E
PIN
1
2
F
I
H
G
J
N
PIN 1
PIN 2
CASE
INCHES
MM
A
.560
.625
14.22 15.88
B
.380
.420
9.65
10.67
C
.100
.135
2.54
3.43
D
.230
.270
5.84
6.86
E
.380
.420
9.65
10.67
F
------
.250
------
6.35
G
.500
.580
12.70
14.73
H
.190
.210
4.83
5.33
I
.020
.045
0.51
1.14
J
.012
.025
0.30
0.64
K
.139
.161
3.53
4.09
L
.140
.190
3.56
4.83
M
.045
.055
1.14
1.40
N
.080
.115
2.03
2.92
*Pulse test: Pulse width 300 µsec, Duty cycle 1%
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