MBR10100 Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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MBR10100 Datasheet PDF : 5 Pages
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SEMICONDUCTOR
MBR10100 Series RRooHHSS
Nell Semiconductors
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 10A
TC = 25°C
Maximum instantaneous forward voltage (1) IF = 10A
TC = 125°C
VF
IF = 20A
TC = 125°C
Maximum reverse current at working peak
reverse voltage(2)
TJ = 25°C
IR
TJ = 100°C
Notes
(1) Pulse test : 300μs pulse width, 1% duty cycle
(2) Pulse test : Pulse width ≤ 40 ms
VALUE
0.8
0.65
0.75
100
6
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRFXX
Typical thermal resistance (junction-ambient)
RΘJA
60
-
Typical thermal resistance (junction-case)
RΘJC
2
3.5
Approximate weight
2
2.5
MBRHXX
60
2
2
UNIT
°C/W
g
Ordering Information Table
Device code MBR F 10 100
1
2
3
4
1 - Schottky MBR series
2 - Package outline, none for TO-220AC
"F" for ITO-220AC (TO-220F)
"H" for TO-263AB (D2PAK)
3 - Current rating, 10 = 10A
4 - Voltage rating, 100 = 100V
Fig.1 Forward current derating curve
12
Resistive or inductive Load
10
8
6
4
2
0
0
50
100
150
Case temperature, (°C)
Fig.2 Maximum non-repetitive peak forward
surge current
160
140
120
100
80
60
40
1
TJ = TJ max.
8.3 ms Single Half Sine-Wave
10
100
Number of cycles at 60 Hz
www.nellsemi.com
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