MBR10100 Ver la hoja de datos (PDF) - Inchange Semiconductor
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MBR10100 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR10100
FEATURES
·Low Forward Voltage
·150℃ Operating Junction Temperature
·Guaranteed Reverse Avalanche
·Low Power Loss/High Efficiency
·High Surge Capacity
·Low Stored Charge Majority Carrier Conduction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 133℃
100
V
10
A
Peak Repetitive Forward Current
IFRM
(Rated VR,Square Wave,20kHz) TC= 133℃
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
IRRM
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
0.5
A
TJ
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc website：www.iscsemi.cn
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