MBR10100 Ver la hoja de datos (PDF) - Sirectifier Electronics
Número de pieza
componentes Descripción
Fabricante
MBR10100 Datasheet PDF : 2 Pages
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MBR1070 thru MBR10100
High Tjm Low IRRM Schottky Barrier Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
6
4
2
RESISTIVE OR INDUCTIVE LOAD
0
20
40
60
80
100 120
CASE TEMPERATURE , C
140 160
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
TJ = 125 C
10
1.0
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
0.1
TJ = 75 C
0.01
TJ = 25 C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
1.0
TJ = 25 C
PULSE WIDTH 300us
0.1
2% Duty cycle
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
10000
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
P2
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