MBR30200CT Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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MBR30200CT Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR30200CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-220-3L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
VR
VR(RMS)
IO
IFSM
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
PD
RΘJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
200
140
30
200
2
50
125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
V(BR)
IR=1mA
200
Reverse current
IR
VR=200V
Forward voltage
VF1
IF=15A
Forward voltage
VF2*
IF=30A
Typical total capacitance
Ctot
VR=4V,f=1MHz
Unit
V
V
A
A
W
℃/W
℃
℃
Typ Max Unit
V
100 μA
1
V
1.1
V
800
pF
www.cj-elec.com
1
E,Aug,2015
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