BAS116 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BAS116 Datasheet PDF : 8 Pages
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Philips Semiconductors
Low-leakage diode
Product specification
BAS116
handboo1k,0h2alfpage
IR
(nA)
10
(1)
1
10 1
10 2
(2)
10 3
0
50
MLB754
100
150 T j (oC) 200
VR = 75 V.
Fig.5 Reverse current as a function of junction
temperature.
2
handbook, halfpage
Cd
(pF)
1
MBG526
0
0
5
10
15 VR (V) 20
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t rr
t
(1)
output signal
1999 May 26
Fig.7 Reverse recovery time test circuit and waveforms.
5
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