BAS116(2004) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BAS116
(Rev.:2004)

Silicon Low Leakage Diode

Infineon Technologies 

Silicon Low Leakage Diode

• Low-leakage applications

• Medium speed switching times

BAS116...

BAS116

3

1

2

Type

BAS116

Package

SOT23

Configuration

single

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Diode reverse voltage

Peak reverse voltage

Forward current

Non-repetitive peak surge forward current

t = 1 µs

VR

VRM

IF

I FSM

t=1s

Total power dissipation

TS ≤ 54°C

Junction temperature

Storage temperature

Ptot

Tj

Tstg

Thermal Resistance

Parameter

Junction - soldering point1)

BAS116

Symbol

RthJS

1For calculation of RthJA please refer to Application Note Thermal Resistance

Marking

JVs

Value

80

85

250

4.5

0.5

370

150

-65 ... 150

Unit

V

mA

A

mW

°C

Value

≤ 260

Unit

K/W

1

Mar-10-2004

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