2N6282 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N6282
ON Semiconductor
2N6282 Datasheet PDF : 6 Pages
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2N6282 thru 2N6284 2N6285 thru 2N6287
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.02
0.05
0.03
0.01
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
RθJC(t) = r(t) RθJC
P(pk)
RθJC = 1.09°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50
100 200 300 500 1000
Figure 4. Thermal Response
ACTIVE–REGION SAFE OPERATING AREA
50
20
0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0
dc
1.0 TJ = 200°C
0.5
0.1 ms
50
0.1 ms
20
0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0
dc
1.0 TJ = 200°C
0.5
50
0.1 ms
20
0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0
dc
1.0 TJ = 200°C
0.5
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 10 20
50 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 10 20
50 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 10 20
50 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6282, 2N6285
Figure 6. 2N6283, 2N6286
Figure 7. 2N6284, 2N6287
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
10,000
5000
2000
1000
500
200
100
50
20
10
1.0
TJ = 25°C
VCE = 3.0 Vdc
IC = 10 A
2N6282/84 (NPN)
2N6285/87 (PNP)
2.0 5.0 10
20 50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 8. Small–Signal Current Gain
1000
TJ = 25°C
700
500
300
200
100
0.1 0.2
Cib
Cob
2N6282/84 (NPN)
2N6285/87 (PNP)
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
50 100
Motorola Bipolar Power Transistor Device Data
3
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