2SD2499 Ver la hoja de datos (PDF) - SavantIC Semiconductor
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Fabricante
2SD2499 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2499
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IC=400mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=4A; IB=0.8A
VCB=1500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
VF
Diode forward voltage
Cob
Collector output capacitance
fT
Transition frequency
Switching times :
IF=6A
IE=0 ; VCB=10V,f=1MHz
IC=0.1A ; VCE=10V
ts
Storage time
tf
Fall time
ICP=4A;IB1=0.8A
fH =15.75kHz
MIN TYP. MAX UNIT
5
V
5
V
1.05
1.3
V
1
mA
67
200
mA
8
25
5
9
1.6
2.0
V
95
pF
2
MHz
7.5
11
µs
0.3
0.6
µs
2
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