DAN222M Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

DAN222M

Switching diode

Galaxy Semi-Conductor 

Production specification

Switching diode

DAN222M

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN MAX UNIT

Reverse breakdown voltage

V(BR)R

IR= 0.1μA

80

V

Reverse voltage leakage current

IR

VR=70V

0.1

μA

Forward voltage

Diode capacitance

Reverse recovery time

VF

IF=100mA

CD

VR=6V f=1MHz

trr

VR=6V,IF=5mA,

RL=50Ω

1.2

V

3.5

pF

4

nS

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

N001

Rev.A

www.gmicroelec.com

2

Share Link: