BTA212X-600E Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BTA212X-600E Datasheet PDF : 7 Pages
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Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212X series D, E and F
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA212X- ...D
...E ...F ...D
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
20 60 70 30
Tj = 110 ˚C; exponential
waveform; gate open
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5
5
3
commutating current
IT(RMS) = 12 A;
dVcom/dt = 20V/µs; gate
open circuit
dIcom/dt
Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 5
commutating current
IT(RMS) = 12 A;
dVcom/dt = 0.1V/µs; gate
open circuit
16 19 100
- V/µs
- A/ms
- A/ms
...D, E, F
tgt
Gate controlled turn-on ITM = 12 A; VD = VDRM(max); -
-
-
2
-
µs
time
IG = 0.1 A; dIG/dt = 5 A/µs
February 2000
3
Rev 1.000
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