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UF1A Ver la hoja de datos (PDF) - Diode Semiconductor Korea

Número de pieza
componentes Descripción
Fabricante
UF1A
DSK
Diode Semiconductor Korea DSK
UF1A Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea
UF1A---UF1M
SURFACE MOUNT RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-214AC,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.002 ounces,0.064 grams
Mounting position: Any
DO-214AC(SMA)
4.5± 0.1
5.1± 0.2
1.3± 0.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25  ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
0.2± 0.05
Dimensions in millimeters
UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
50
VRMS
35
VDC
50
Maximum average forw ard rectified current
@TL=90
Peak forw ard surge current
IF(AV)
8.3ms single half-sine-w ave
IFSM
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage at1.0 A VF
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
Typical reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
(Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
100 200 400 600 800 1000 V
70
140 280 420 560 700
V
100 200 400 600 800 1000 V
1.0
A
30
1.0
50
15
1.4
10
100
15
- 55 ---- + 150
- 55 ---- + 150
A
1.7
V
A
75
ns
12
pF
/W
www.diode.kr

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