2SC5382 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SC5382

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC5382

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0

550

V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6 A

1.0

V

VBEsat Base-emitter saturation voltage

IC=3A; IB=0.6 A

1.5

V

ICBO

Collector cut-off current

ICEO

Collector cut-off current

IEBO

Emitter cut-off current

VCB=1200V; IE=0

VCE=550V; IB=0

VEB=9V; IC=0

0.1

mA

0.1

mA

0.1

mA

hFE-1

DC current gain

IC=3A ; VCE=5V

10

hFE-2

DC current gain

固IN电C半H导AN体GE SEMICONDUTOR Switching times

ton

Turn-on time

ts

Storage time

IC=1mA ; VCE=5V

10

1.3

IC=3A;IB1=0.6A ;IB2=1.2A

RL=50Ω;VBB2=4V

4.0

μs

μs

tf

Fall time

0.3

μs

2

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