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BS107 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
BS107
Infineon
Infineon Technologies Infineon
BS107 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BS 107
Drain-source on-resistance
RDS (on) = Æ’(Tj)
parameter: ID = 0.12 A, VGS = 4.5 V
65
Ω
55
R
DS (on)
50
45
40
35
30
25
20
15
10
5
0
-60
-20
98%
typ
20
60
100 ËšC 160
Tj
Gate threshold voltage
VGS (th) = Æ’(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
V
GS(th)
3.6
3.2
2.8
2.4
98%
2.0
typ
1.6
1.2
2%
0.8
0.4
0.0
-60
-20
20
60
100 ËšC 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode
IF = Æ’(VSD)
parameter: Tj, tp = 80 µs
10 0
pF
C
10 2
A
I
F
10 -1
C
iss
10 1
C
oss
Crss
10 0
0
5 10 15 20 25 30 V 40
V
DS
Data Sheet
7
10 -2
Tj = 25 ËšC typ
Tj = 150 ËšC typ
Tj = 25 ËšC (98%)
Tj = 150 ËšC (98%)
10 -3
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
05.99

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