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MJ802

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS - 200 WATTS

New Jersey Semiconductor 

MJ802

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector- Emitter Breakdown Voltage

(lc = 200 mAdc, RBE = 100 Q)

Collector-Emitter Sustaining Voltage (Note 1) (lc = 200 mAdc)

Collector-Base Cutoff Current

(VCB = 100Vdc, IE = 0)

(VCB = 100 Vdc, IE = 0, Tc = 150°C)

Emitter-Base Cutoff Current

(VBE = 4.0 Vdc, lc = 0)

ON CHARACTERISTICS!1 >

DC Current Gain (Note 1 )

(lc = 7.5AdC, VCE = 2.0Vdc)

Base- Emitter "On" Voltage

(lc = 7.5 Adc, VCE = 2.0 Vdc)

Collector-Emitter Saturation Voltage

(lc = 7.5 Adc, IB = 0.75 Adc)

Base-Emitter Saturation Voltage

(lc = 7.5Adc, IB = 0.75 Adc)

DYNAMIC CHARACTERISTICS

Current Gain - Bandwidth Product

(lc = 1.0Adc, VCE = 10 Vdc, f = 1.0 MHz)

1. Pulse Test: Pulse Width £ 300 |is, Duty Cycle < 2.0%.

Symbol

Min

Max

Unit

BVCER

100

vCEO(sus)

90

ICBO

-

'EBO

-

-

Vdc

-

Vdc

mAdc

1.0

5.0

1.0

mAdc

HFE

25

100

-

vBE(on)

-

1.3

Vdc

vCE(sat)

-

0.8

Vdc

vBE(sat)

-

1.3

Vdc

fj

2.0

-

MHz

s,

V\

\

\

\

\

\

Tc, CASE TEMPERATURE (°C)

Figure 1. Power-Temperature Derating Curve

20

40

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