VN10KM Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
VN10KM Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (Tc - 25° C unless otherwise noted)
STATIC
Parameter
Type
Min.
Typ.
Max.
Units
Test Conditions
B^DSS
Drain-Source Breakdown
Voltage
All
60
^GS(lh) Gate-Threshold Voltage
VN10KM
0.8
VN2222KM
0.6
'GSSF
Gate-Body Leakage Forward
All
120
V
vGS = °
ID = 100 MA
1.5
2.5
1.5
2.5
V
VDS = VGS. ID = 1 mA
1
100
nA
VGS = 15V,VDS = 0
'OSS
Zero Gate Voltage Drain
Current
'D(on)
On-State Drain Current^
All
0.1
10
^A
VDS=45V
,VGS=0
All
0.75
1.5
A
VDS^2VDS(ON), VGS =10V
vDS(on)
Static Drain-Source On-State
Voltage1
All
VN10KM
VN2222KM
R0S(on)
Static Drain-Source On-State
Resistance1
All
VN10KM
VN2222KM
RDS(on)
Static Drain-Source On-State
Resistance1
VN10KM
VN2222KM
1.2
1.5
2
2.5
3
3.75
6
7.5
4
5
6
7.5
7.2
9
10.8
13.5
DYNAMIC
gfs
Forward Transductance^
All
Ciss
Input Capacitance
All
Coss
Output Capacitance
All
Crss
Reverse Transfer Capacitance
All
tQjsj
Turn-On Time ime
All
100
200
40
60
17
25
3
5
7
10
tQFF
Turn-Off Time Time
All
7
10
THERMAL RESISTANCE
FithJC
Junction-to-Case
All
RthJA
Junction-to-Ambient
All
26
32
125
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
VN10KM
Ig
Continuous Source Current
(Body Diodel
VN2222KM
ISM
Source Current'
All
(Body Diode)
VN10KM
VSD
Diode Forward Voltage1
VN2222KM
-0.3
-0.25
-1
-0.85
-0.85
V
vGS =5v ,iD=°-2A
V
VGS = IOV ,iD = °-5A
n
VGS = 5V , ID = 0.2A
n
VGS=10V , |D=0.5A
n
VGS =10V. ID =°-5A. TC =125°C
n
VGS=10V, ID-0.5A, Tc=125rC
mS
VDS>2VDS(ON),ID = 0.5A
pF
pF
VGs-0 ,Vos-25v
f - 1 MHz
pF
ns
VDD=15V , | D s 0.6A
ns
Rg = 25fi , RL = 23n
ns
(MOSFET switching times are
essentially independent of
ns
operating temperature.}
°C/W
°C/W
Free Air Operation
Modified MOSPOWER symbol
A
showing the integral P-N
Junction rectifier
A
?°
A
V
TC=25°C, IS=-0.3A, VGS =0
V
TC=25°C, IS=-0.25A, VGS = 0
1 Pulse Test: Pulse Width < 300 MSBC, Duty Cycle < 2%
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