IRFD120 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

IRFD120

Power MOSFET

Vishay Semiconductors 

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFD120, SiHFD120

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91128

S-81393-Rev. A, 07-Jul-08

www.vishay.com

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