DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UT8Q512K32 Ver la hoja de datos (PDF) - Aeroflex Corporation

Número de pieza
componentes Descripción
Fabricante
UT8Q512K32
Aeroflex
Aeroflex Corporation Aeroflex
UT8Q512K32 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
(-40°C to +125°C) (VDD = 3.3V + 0.3)
SYMBOL
PARAMETER
tAVAV1
tAVQV
tAXQX2
tGLQX2
Read cycle time
Read access time
Output hold time
G-controlled Output Enable time
tGLQV
tGHQZ 2
G-controlled Output Enable time (Read Cycle 3)
G-controlled output three-state time
tETQX 2,3
tETQV 3
tEFQZ1 ,2 ,4
En-controlled Output Enable time
En-controlled access time
En-controlled output three-state time
MIN
25
3
3
3
Notes: * Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 300mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge ofEn. SEU immunity does not affect the read parameters.
MAX
25
10
10
25
10
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
High Z to Active Levels
Active to High Z Levels
VLOAD + 300mV
VLOAD
{
{
VLOAD - 300mV
Figure 3. 3-Volt SRAM Loading
VH - 300mV
}
}
VL + 300mV
6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]