VDD
En
DATA RETENTION MODE
50%
tEFR
VDR > 2.0V
50%
tR
Figure 7. Low VDD Data Retention Waveform
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(1 Second Data Rentention Test)
SYMBOL
PARAMETER
VDR
VDD for data retention
IDDR 1,2
Data retention current (per byte)
tEFR 1,3
Chip select to data retention time
tR1 ,3
Operation recovery time
Notes:
1. En = VDD - .2V, all other inputs = V DR or VSS.
2. Data retention current (ID D R) Tc = 25oC.
3. Not guaranteed or tested.
4. VDR = T=-40 oC and 125 oC.
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(10 Second Data Retention Test, TC=-40oC and +125oC)
SYMBOL
PARAMETER
V
D
1
D
VDD for data retention
tEFR2, 3
Chip select to data retention time
tR2, 3
Operation recovery time
Notes:
1. Performed at VDD (min) and VDD (max).
2. En = VSS, all other inputs = V DR or V SS.
3. Not guaranteed or tested.
MINIMUM
2.0
--
0
tAVAV
MAXIMUM UNIT
--
V
2.0
mA
ns
ns
MINIMUM
3.0
0
tAVAV
MAXIMUM UNIT
3.6
V
ns
ns
11