DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ES3J Ver la hoja de datos (PDF) - SUNMATE electronic Co., LTD

Número de pieza
componentes Descripción
Fabricante
ES3J
SUNMATE
SUNMATE electronic Co., LTD SUNMATE
ES3J Datasheet PDF : 2 Pages
1 2
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
3.0
2.0
Single Phase Half Wave
1.0
60Hz Inductive or Resistive Load
0.375(9.5mm) Lead Length
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE, ( C)
FIG.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
1.0
°
TJ =25 C
0.1
Pulse Width=300us
1% Duty Cycle
0.01
°
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
1000
100
TJ =25 C
f=1MHz
Vsig=50mVp-p
ES3A-ES3D
ES3E-ES3J
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
8.3ms Single Half Sine-Wave
(JEDEC Method) Tj = Tjmax
100
50
1 Cycle
0
1
2
4 6 8 10
20
40 60 100
NUMBER OF CYCLES AT 60 Hz
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
10
1.0
TJ=125 C
0.1
TJ =25
0.01
0
20
40
60
80
100
120
140
°
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
F1G.6-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
50Ω
10Ω
NONINDUCTIVE NONINDUCTIVE
TRR
+0.5A
(-)
(+)
25 Vdc
(approx.)
(-)
D.U.T.
1Ω
NON
INDUCTIVE
PULSE
GENERATIOR
(NOTE 2)
(+)
OSCILLOSCOPE
(NOTE 1)
0
-0.25A
-1.0A
NOTES : 1.Rise Time=7ns max. Input Impedance=
1cm
SET TIME BASE FOR
°
10
0.1
1.0
10
100
REVERSE VOLTAGE,(V)
1 megohm. 22pF
2.Rise time=10ns max. Source Impedance=
50 ohms
50/100ns/cm
2of2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]