BC846 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BC846

NPN Silicon AF Transistors

Infineon Technologies 

BC846...-BC850...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

V

IC = 10 mA, IB = 0 , BC846...

65

-

-

IC = 10 mA, IB = 0 , BC847..., BC850...

45

-

-

IC = 10 mA, IB = 0 , BC848..., BC849...

30

-

-

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC846...

IC = 10 µA, IE = 0 , BC847..., BC850...

IC = 10 µA, IE = 0 , BC848..., BC849...

V(BR)CBO

80

-

-

50

-

-

30

-

-

Emitter-base breakdown voltage

IE = 0 , IC = 10 µA

Collector-base cutoff current

VCB = 45 V, IE = 0

VCB = 30 V, IE = 0 , TA = 150 °C

DC current gain1)

IC = 10 µA, VCE = 5 V, hFE-grp.A

IC = 10 µA, VCE = 5 V, hFE-grp.B

IC = 10 µA, VCE = 5 V, hFE-grp.C

IC = 2 mA, VCE = 5 V, hFE-grp.A

IC = 2 mA, VCE = 5 V, hFE-grp.B

IC = 2 mA, VCE = 5 V, hFE-grp.C

V(BR)EBO -

6

-

I CBO

hFE

µA

- 0.015 -

-

5

-

-

- 140 -

- 250 -

- 480 -

110 180 220

200 290 450

420 520 800

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-emitter voltage1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VCEsat

mV

-

90 250

- 200 600

VBEsat

-

700

-

-

900

-

VBE(ON)

580 660 700

-

- 770

1Pulse test: t < 300µs; D < 2%

5

2007-04-20

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